Title :
A 220–245 GHz switched beam Butler Matrix in 0.13 µm SiGe BiCMOS technology
Author :
Elkhouly, Mohamed ; Mao Yanfei ; Meliani, Chafik ; Ellinger, F. ; Scheytt, J. Christoph
fDate :
Sept. 30 2013-Oct. 3 2013
Abstract :
This paper presents a 220-245 GHz 4 way Butler Matrix chip in 0.13μm SiGe BiCMOS technology. The chip features four 230 GHz amplifiers with almost 9 dB of gain. A SP4T switch is integrated to select between the four outputs of the beamforming network. Finally, an amplifier used to compensate the losses of the SP4T is integrated. The chip exhibits 0 dB of insertion gain and draws 104 mA from 3.3 V supply mainly consumed by the amplifiers. The entire chip occupies 1.5 × 2.4 mm2.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; antenna phased arrays; integrated circuit design; microwave switches; millimetre wave amplifiers; millimetre wave antenna arrays; 4 way Butler matrix chip; SP4T switch; SiGe; SiGe BiCMOS technology; amplifiers; beamforming network; current 104 mA; frequency 220 GHz to 245 GHz; frequency 230 GHz; size 0.13 mum; switched beam Butler matrix; voltage 3.3 V; Butler matrices; Heterojunction bipolar transistors; Impedance; Silicon germanium; Switches; Beamforming; Butler Matrix; Millimeter-wave; Phased Array; SiGe;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4799-0126-5
DOI :
10.1109/BCTM.2013.6798158
