DocumentCode :
1862463
Title :
High temperature stable RF MEMS switch based on tungsten-titanium
Author :
Klein, S. ; Thilmont, S. ; Ziegler, V. ; Prechtel, U. ; Schmid, U. ; Seidel, H.
Author_Institution :
Micromechanics, Microfluidics/Microactuators, Saarland Univ., Saarbrucken, Germany
fYear :
2009
fDate :
21-25 June 2009
Firstpage :
1409
Lastpage :
1412
Abstract :
In this paper we present a high temperature stable, capacitive RF MEMS switch based on a tungsten-titanium alloy. The evaluation of the temperature stability was done by annealing experiments up to 500degC. Due to an intrinsic residual stress the switch features a large out of plane deflection. This allows the combination of high open-state isolation with a moderate pull-in voltage and with high restoring forces. Measurements of the high frequency performance in the 20 to 36 GHz range provided good results for insertion loss and isolation.
Keywords :
internal stresses; microswitches; microwave switches; titanium alloys; tungsten alloys; capacitive RF MEMS switch; frequency 20 GHz to 36 GHz; intrinsic residual stress; temperature stability evaluation; tungsten-titanium alloy; Annealing; Frequency measurement; Loss measurement; Performance loss; Radiofrequency microelectromechanical systems; Residual stresses; Stability; Switches; Temperature; Voltage; RF MEMS; cantilever; electrostatic actuation; microswitch; stress; temperature stability;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
Type :
conf
DOI :
10.1109/SENSOR.2009.5285836
Filename :
5285836
Link To Document :
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