DocumentCode :
1862474
Title :
The performance of thin film solar cells employing photovoltaic ZnSe/CdTe, CdS/CdTe and ZnTe/CdTe heterojunctions
Author :
Potlog, T. ; Spalatu, N. ; Fedorov, V. ; Maticiuc, N. ; Antoniuc, C. ; Botnariuc, V. ; Hiie, J. ; Raadik, T. ; Valdna, V.
Author_Institution :
Phys. Dept., Moldova State Univ., Chisinau, Moldova
fYear :
2011
fDate :
19-24 June 2011
Abstract :
This paper focuses on the photovoltaic parameters of ZnSe/CdTe, CdS/CdTe, and ZnTe/CdTe thin film heterojunction solar cells. ZnSe/CdTe, CdS/CdTe, and ZnTe/CdTe thin film heterojunction solar cells were fabricated by Close Space Sublimation (CSS) on TCO-coated glass substrates. All types of solar cells were fabricated in a superstrate configuration. The thickness of ZnSe and ZnTe layers was varied in order to adjust the solar cell performance. A similar cadmium chloride solution for the treatment of a CdTe layer with an elevated temperature air annealing of the completed devices before the back contact deposition was applied to ZnSe/CdTe and CdS/CdTe thin film heterojunctions solar cells with exception of ZnTe/CdTe. All cells were characterized through light and dark current density-voltage (J-V) measurements and quantum efficiency (QE) measurements. The saturation current, ideality factor and photovoltaic parameters for all thin film heterojunction solar cells are presented. The investigation at the room temperature under illumination of 100 mW/cm2 through the wide gap components of ZnSe/CdTe, CdS/CdTe, and ZnTe/CdTe heterojunctions showed a value of conversion efficiency (η) of solar energy to electric energy about 4.7%, 9.9%, and 1.3%, respectively. The incorporation of Zn at the ZnSe and CdTe interface doubles the short circuit current density and improves the performance of ZnSe/CdTe thin film heterojunction solar cells.
Keywords :
II-VI semiconductors; annealing; cadmium compounds; dark conductivity; lightning; photovoltaic effects; selenium compounds; semiconductor growth; semiconductor heterojunctions; semiconductor thin films; solar cells; sublimation; tellurium compounds; wide band gap semiconductors; zinc compounds; CSS; CdS-CdTe; QE measurements; SiO2; TCO-coated glass substrates; ZnSe-CdTe; ZnTe-CdTe; back contact deposition; cadmium chloride solution; close space sublimation; dark current density-voltage measurements; elevated temperature air annealing; illumination; light current density-voltage measurements; photovoltaic heterojunctions; photovoltaic parameters; quantum efficiency measurements; temperature 293 K to 298 K; thin film heterojunction solar cells; thin film solar cells performance; wide gap components; Films; Glass; Heterojunctions; Photovoltaic cells; Photovoltaic systems; Temperature; Temperature measurement;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186211
Filename :
6186211
Link To Document :
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