• DocumentCode
    1862518
  • Title

    Geometry scalable model parameter extraction for mm-wave SiGe-heterojunction transistors

  • Author

    Pawlak, Andreas ; Schroter, Michael ; Fox, A.

  • Author_Institution
    Tech. Univ. Dresden, Dresden, Germany
  • fYear
    2013
  • fDate
    Sept. 30 2013-Oct. 3 2013
  • Firstpage
    127
  • Lastpage
    130
  • Abstract
    The observation of negative perimeter collector current in advanced SiGe HBT technologies is explained and a general geometry scaling approach is proposed. Application to mm-wave SiGe-HBTs shows excellent results of HICUM/L2 v2.31 for a wide range of emitter dimensions. Non-monotonic variation of peak fT with emitter dimensions demonstrates the relevance of a geometry scalable compact model for circuit optimization.
  • Keywords
    Ge-Si alloys; circuit optimisation; heterojunction bipolar transistors; millimetre wave bipolar transistors; HBT technologies; HICUM/L2 v2.31; SiGe; circuit optimization; emitter dimensions; geometry scalable model; mm-wave heterojunction transistors; negative perimeter collector current; nonmonotonic variation; parameter extraction; Capacitance; Geometry; Heterojunction bipolar transistors; Integrated circuit modeling; Junctions; HICUM/L2; SiGe-HBTs; geometry scalable model; mm-wave; parameter extraction;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
  • Conference_Location
    Bordeaux
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4799-0126-5
  • Type

    conf

  • DOI
    10.1109/BCTM.2013.6798160
  • Filename
    6798160
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1862518