Title :
Comparison of IGBTs and HF-GTOs with respect to high frequency inverter applications
Author :
Bober, G. ; Heumann, K.
Author_Institution :
Inst. fur Allgemeine Elektrotech., Tech. Univ., Berlin, Germany
Abstract :
IGBTs and high-frequency (HF) GTO thyristors are investigated for applications in fast switching PWM inverters. Device ratings are 1200 V/300 A and 1000 V/300 A for the IGBTs and 1600 V/600 A for the HF-GTOs. Subjects of the comparison are the gate-drive requirements, conduction and switching losses, switching speed, and overload capability
Keywords :
insulated gate bipolar transistors; invertors; pulse width modulation; switching; thyristor applications; 1000 V; 1200 V; 1600 V; 300 A; 600 A; GTO thyristors; HF-GTOs; IGBTs; conduction losses; fast switching PWM inverters; gate-drive requirements; overload capability; switching losses; switching speed; Diodes; Frequency conversion; Insulated gate bipolar transistors; Pulse width modulation inverters; Switching loss; Tail; Temperature; Thermal resistance; Thyristors; Voltage;
Conference_Titel :
Power Electronics Specialists Conference, 1991. PESC '91 Record., 22nd Annual IEEE
Conference_Location :
Cambridge, MA
Print_ISBN :
0-7803-0090-4
DOI :
10.1109/PESC.1991.162728
