Modeling of CdZnTe/CdTe/Si triple junction solar cells

Author

Xiao, Y.G. ; Li, Z.Q. ; Lestrade, M. ; Li, Z. M Simon

Author_Institution

Crosslight Software Inc., Burnaby, BC, Canada

fYear

2011

fDate

19-24 June 2011

Abstract

Using Crosslight APSYS, we have made two-dimensional simulation of triple junction solar cells based on the CdZnTe/CdTe/Si material system with tunnel junctions. The basic physical quantities like band diagram, optical absorption and generation for the modeled TJ cell, and external quantum efficiency for individual sub cell junctions are obtained. Current matching analyses and multi-sun concentration simulation are performed and the presented results indicate cell efficiency 34.92% (one sun) and maximum 39.09% (around 500-700 sun). The results indicates that II-VI CdZnTe and CdTe based materials can be used to develop multi-junction solar cell on silicon substrate with cell efficiency comparable to those III-V based compound on Ge substrate.

Keywords

cadmium compounds; elemental semiconductors; germanium; silicon; solar cells; zinc compounds; CdZnTe-CdTe-Si; Crosslight APSYS; Ge; Si; band diagram; current matching analyses; multi-sun concentration simulation; optical absorption; triple junction solar cells modeling; tunnel junctions; Analytical models; Junctions; Photovoltaic cells; Silicon; Substrates; Sun;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6186215

Filename

6186215