Impact of reverse EB stress and mixed-mode stress on low-frequency noise for SiGe HBTs in forward and inverse modes

Author

Jin Tang ; Jonggook Kim ; Babcock, Jeff A. ; Sadovnikov, Alexander ; Krakowski, Tracey L.

Author_Institution

Texas Instrum. Inc., Santa Clara, CA, USA

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

163

Lastpage

166

Abstract

We present in this work the impact of electrical reliability stress on low-frequency noise for SiGe HBTs in forward and inverse modes. The reverse EB stress and the forward mixed-mode stress are investigated. For the first time inverse mode noise is used as a tool to investigate stress-induced damage. The fact that reverse EB stress degrades SiGe HBTs low-frequency noise in the forward mode but not in the inverse mode indicates that the stress-induced traps are located in the EB spacer oxide. Mixed-mode stress degrades both the forward and inverse modes low-frequency noise, consistent with the theory that both the EB and CB junctions are damaged during the stress. The observed noise degradation under stress calls for accurate noise aging modeling in reliability simulation.

Keywords

Ge-Si alloys; heterojunction bipolar transistors; semiconductor device reliability; EB spacer oxide; HBT; SiGe; electrical reliability stress; first time inverse mode noise; forward modes low-frequency noise; heterojunction bipolar transistors; inverse modes low-frequency noise; mixed-mode stress; reverse EB stress; stress-induced traps; Degradation; Junctions; Low-frequency noise; Silicon germanium; Stress; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798166

Filename

6798166