DocumentCode :
1862660
Title :
Field emission from vertical Graphene flakes grown on copper particles by CVD method
Author :
Ning Zhao ; Jing Chen ; Ke Qu ; Wei Lei ; Xiaobing Zhang
Author_Institution :
Sch. of Electron. Sci. & Eng., Southeast Univ., Nanjing, China
fYear :
2015
fDate :
27-29 April 2015
Firstpage :
1
Lastpage :
2
Abstract :
Field emission of Graphene is limited by the surface morphology because the existing deposition methods lead to Graphene flakes that lay flat on the substrate. To overcome this problem, we grow vertically aligned Graphene flakes on Cu particles using chemical vapor deposition method. The Graphene flakes are oriented at some angles with respect to the substrate, leading to good field emission performance. This can be attributed to the enhanced local electric field at the tips and edges of the vertical Graphene flakes as well as the electrical conductivity enhancement due to the existence of Cu particles. Compared with the flat Graphene layer grown by CVD method, the vertical Graphene flakes show a better field emission performance, with a lower turn-on voltage and a larger current density. The results are of significance to the Graphene based field emission device.
Keywords :
chemical vapour deposition; copper; current density; field emission; graphene; nanofabrication; surface conductivity; C-Cu; CVD method; chemical vapor deposition; copper particles; current density; electrical conductivity; field emission; local electric field; turn-on voltage; vertically aligned graphene flakes; Copper; Graphene; Morphology; Silicon; Substrates; Surface morphology; Temperature measurement; copper particles; field emission; vertical Graphene;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2015 IEEE International
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7109-1
Type :
conf
DOI :
10.1109/IVEC.2015.7223890
Filename :
7223890
Link To Document :
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