Title :
Comparative study of HBT ageing in a complementary SiGe:C BiCMOS technology
Author :
Fischer, G.G. ; Molina, Juan ; Tillack, Bernd
Author_Institution :
IHP, Frankfurt (Oder), Germany
fDate :
Sept. 30 2013-Oct. 3 2013
Abstract :
Both npn- and pnp-SiGe HBT types of a complementary BiCMOS technology were consistently studied under mixed-mode and reverse stress conditions to check for any ageing mismatches. These were found to be more pronounced under forward than under reverse stress. Long-term stress-tests revealed a not yet described base current degradation “catching-up” under low current stress conditions. The resulting ageing parameters were put together into an ageing function for incorporation into HBT compact models.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; ageing; heterojunction bipolar transistors; semiconductor materials; stress analysis; HBT ageing; HBT compact models; SiGe:C; ageing function; complementary BiCMOS technology; long-term stress-tests; mixed-mode stress conditions; reverse stress conditions; Degradation; Heterojunction bipolar transistors; Heterojunctions; Reliability; Stress; CBiCMOS; HBT reliability; Heterojunction bipolar transistors; bipolar modeling;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4799-0126-5
DOI :
10.1109/BCTM.2013.6798167
