A double balanced 81–86GHz EBAND active down conversion mixer in SiGe technology

Author

Sheinman, B. ; Carmon, R. ; Ben-Yishay, R. ; Katz, O. ; Mazor, N. ; Levinger, R. ; Elad, Danny ; Golberg, Alexander ; Bruetbart, A.

Author_Institution

IBM Haifa Res. Lab., Haifa, Israel

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

183

Lastpage

186

Abstract

An RF to IF down-conversion mixer for the upper 81-86GHz E-BAND frequency range was designed and fabricated in IBM 0.12μm SiGe technology. The Mixer comprises of a double balanced Gilbert-cell in which the RF signal is driven through a marchand balun into the common base amplifying mixer stage. The mixer exhibits conversion gain of 7dB, SSB noise figure of 12dB and input compression I1dBCP of -10dBm. The low noise figure and high conversion gain of the mixer enables the addition of a highly linear analog controlled attenuator between the mixer and LNA to further improve the linearity of the receiver chain without degrading the noise performance. The mixer area is 0.4mm2 and it consumes 110mW from a 2.7V power supply.

Keywords

Ge-Si alloys; baluns; low noise amplifiers; millimetre wave mixers; EBAND active down conversion mixer; IBM SiGe technology; IF down-conversion mixer; LNA; RF down-conversion mixer; RF signal; SSB noise figure; SiGe; common base amplifying mixer stage; double balanced Gilbert-cell; frequency 81 GHz to 86 GHz; gain 12 dB; gain 7 dB; high conversion gain; highly linear analog controlled attenuator; low noise figure; marchand balun; power 110 mW; receiver chain; size 0.12 mum; size 0.4 mm; voltage 2.7 V; Gain; Impedance matching; Mixers; Noise figure; Silicon germanium; Temperature measurement; Down converter; EBAND; Mixer; Noise Figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798171

Filename

6798171