• DocumentCode
    1862857
  • Title

    High-density gate aperture arrays for Spindt cathode fabricated using nanosphere lithography

  • Author

    Nannan Li ; Baoqing Zeng ; Fei Yan ; Shucai Pang ; Dazhi Jin ; Lei Chen ; Wei Xiang ; De Zhang

  • Author_Institution
    Nat. Key Lab. of Sci. & Technol. on Vacuum Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
  • fYear
    2015
  • fDate
    27-29 April 2015
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    The prevailing techniques currently involved in the fabrication of gate aperture arrays for high-density Spindt cathodes are expensive, time consuming and low-throughput, which limits the potential usage of Spindt cathodes in the microwave electro-vacuum devices in future. In this work, we applied nanosphere lithography technique to fabricate periodic gate aperture arrays for high-density Spindt cathodes. It can be found that the technique is low-cost, high-efficiency to be used.
  • Keywords
    cathodes; nanolithography; high-density Spindt cathodes; microwave electro-vacuum devices; nanosphere lithography technique; periodic gate aperture arrays; Apertures; Cathodes; Etching; Fabrication; Lithography; Logic gates; Metals; Spindt cathode; nanosphere lithography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Electronics Conference (IVEC), 2015 IEEE International
  • Conference_Location
    Beijing
  • Print_ISBN
    978-1-4799-7109-1
  • Type

    conf

  • DOI
    10.1109/IVEC.2015.7223898
  • Filename
    7223898