DocumentCode :
1862857
Title :
High-density gate aperture arrays for Spindt cathode fabricated using nanosphere lithography
Author :
Nannan Li ; Baoqing Zeng ; Fei Yan ; Shucai Pang ; Dazhi Jin ; Lei Chen ; Wei Xiang ; De Zhang
Author_Institution :
Nat. Key Lab. of Sci. & Technol. on Vacuum Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China
fYear :
2015
fDate :
27-29 April 2015
Firstpage :
1
Lastpage :
2
Abstract :
The prevailing techniques currently involved in the fabrication of gate aperture arrays for high-density Spindt cathodes are expensive, time consuming and low-throughput, which limits the potential usage of Spindt cathodes in the microwave electro-vacuum devices in future. In this work, we applied nanosphere lithography technique to fabricate periodic gate aperture arrays for high-density Spindt cathodes. It can be found that the technique is low-cost, high-efficiency to be used.
Keywords :
cathodes; nanolithography; high-density Spindt cathodes; microwave electro-vacuum devices; nanosphere lithography technique; periodic gate aperture arrays; Apertures; Cathodes; Etching; Fabrication; Lithography; Logic gates; Metals; Spindt cathode; nanosphere lithography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2015 IEEE International
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7109-1
Type :
conf
DOI :
10.1109/IVEC.2015.7223898
Filename :
7223898
Link To Document :
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