AlInN as high-index-contrast material for GaN-based optoelectronics

Author

Carlin, J.-F. ; Dorsaz, J. ; Zellweger, C. ; Gradecak, S. ; Ilegems, M.

Author_Institution

Inst. of Quantum Electron. & Photonics, Swiss Fed. Inst. of Technol., Lausanne, Switzerland

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

36

Lastpage

41

Abstract

High quality AlInN was grown near lattice-matched to GaN. It shows about 7% index contrast with GaN. AlInN is thus a promising alternative to AlGaN, as demonstrated by a 20-pairs AlInN/GaN distributed Bragg reflector with over 90% reflectivity. Light emitting diodes with active layers grown on top of AlInN/GaN multi-layers exhibit internal quantum efficiencies comparable to those of reference diodes grown directly on GaN buffer, this further demonstrate that AlInN material quality can meet the needs of optoelectronic application.

Keywords

III-V semiconductors; aluminium compounds; distributed Bragg reflectors; gallium compounds; indium compounds; light emitting diodes; multilayers; reflectivity; semiconductor growth; wide band gap semiconductors; AlInN-GaN; AlInN-GaN multilayers; GaN buffer; GaN-based optoelectronics; distributed Bragg reflector; high-index-contrast material; internal quantum efficiencies; light emitting diodes; Buffer layers; Distributed Bragg reflectors; Fluid flow; Gallium nitride; Indium; Lattices; Light emitting diodes; Optical materials; Photonics; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on

Print_ISBN

0-7803-8614-0

Type

conf

DOI

10.1109/ISCSPC.2003.1354428

Filename

1354428