A low-phase-noise monolithically integrated 60 GHz push-push VCO for 122 GHz applications in a SiGe bipolar technology

Author

Chakraborty, Arpan ; Trotta, Saverio ; Weigel, Robert

Author_Institution

RF Innovation, Infineon Technol. AG, Neubiberg, Germany

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

195

Lastpage

198

Abstract

This paper presents a 60 GHz push-push VCO fabricated in an automotive qualified SiGe:C bipolar production technology with an f_t of 170 GHz and f_max of 250 GHz. The VCO uses an AC coupled varactor and features a transmission line based biasing scheme for the varactor to improve the phase noise. The VCO can be tuned from 58.2 GHz to 63 GHz and achieves a minimum phase noise of -108 dBc/Hz at 1 MHz offset. The phase noise remains below -105 dBc/Hz over the entire tuning range. The VCO consumes 145 mW from a 3.3 V power supply.

Keywords

Ge-Si alloys; automotive electronics; bipolar MIMIC; carbon; millimetre wave oscillators; phase noise; semiconductor materials; varactors; voltage-controlled oscillators; AC coupled varactor; SiGe:C; automotive qualified bipolar production technology; frequency 58.2 GHz to 122 GHz; low-phase-noise monolithically integrated push-push VCO; phase noise; power 145 mW; transmission line based biasing scheme; voltage 3.3 V; Phase noise; Power transmission lines; Silicon germanium; Temperature measurement; Tuning; Varactors; Voltage-controlled oscillators; 122 GHz; 60 GHz; SiGe; VCO; bipolar; fundamental suppression; low phase noise; push-push;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798174

Filename

6798174