Title :
High-density gate aperture arrays for Mo-FEAs fabricated by electron beam lithography
Author :
Fei Yan ; Nannan Li ; Lei Chen ; Dazhi Jin ; Wei Xiang
Author_Institution :
Inst. of Electron. Eng., Terahertz Res. Center Chinese Acad. of Eng. Phys., Mianyang, China
Abstract :
Electron sources are of great importance for the operation of the microwave devices. High-density field emitter arrays (FEA) can be used as electron sources for microwave devices with frequencies extending into the THz. In this work, we report on the successful application of electron beam lithography for fabricating the high-density gate aperture arrays for Mo-FEAs. We demonstrate gate aperture arrays with sub-micron pitch and density up to 108 tips / cm2. The results can provide useful information for the application of field emitter arrays to special microwave devices.
Keywords :
electron beam lithography; electron sources; field emitter arrays; microwave devices; molybdenum; FEA; Mo; electron beam lithography; electron source; field emitter array; high-density gate aperture array; microwave device; submicron pitch; Apertures; Field emitter arrays; Films; Logic gates; Microwave FET integrated circuits; Microwave integrated circuits; Microwave theory and techniques; electron beam lithography; field emitter array; gate aperture;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2015 IEEE International
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7109-1
DOI :
10.1109/IVEC.2015.7223901
