High-density gate aperture arrays for Mo-FEAs fabricated by electron beam lithography

Author

Fei Yan ; Nannan Li ; Lei Chen ; Dazhi Jin ; Wei Xiang

Author_Institution

Inst. of Electron. Eng., Terahertz Res. Center Chinese Acad. of Eng. Phys., Mianyang, China

fYear

2015

fDate

27-29 April 2015

Firstpage

1

Lastpage

2

Abstract

Electron sources are of great importance for the operation of the microwave devices. High-density field emitter arrays (FEA) can be used as electron sources for microwave devices with frequencies extending into the THz. In this work, we report on the successful application of electron beam lithography for fabricating the high-density gate aperture arrays for Mo-FEAs. We demonstrate gate aperture arrays with sub-micron pitch and density up to 10⁸ tips / cm². The results can provide useful information for the application of field emitter arrays to special microwave devices.

Keywords

electron beam lithography; electron sources; field emitter arrays; microwave devices; molybdenum; FEA; Mo; electron beam lithography; electron source; field emitter array; high-density gate aperture array; microwave device; submicron pitch; Apertures; Field emitter arrays; Films; Logic gates; Microwave FET integrated circuits; Microwave integrated circuits; Microwave theory and techniques; electron beam lithography; field emitter array; gate aperture;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Electronics Conference (IVEC), 2015 IEEE International

Conference_Location

Beijing

Print_ISBN

978-1-4799-7109-1

Type

conf

DOI

10.1109/IVEC.2015.7223901

Filename

7223901