Improvement of hydrogen passivation via the template of acid textured surface

Author

Huang, C.C. ; Chen, W.H. ; Lin, J.Y.

Author_Institution

Motech Ind. Inc., Tainan, Taiwan

fYear

2011

fDate

19-24 June 2011

Abstract

In solar cell manufacturing, surface texturing plays an important role in light trapping. Besides optical performance, it was revealed to be also critical to passivation performance of solar cells in this study. Among wafers textured with different chemicals (HNO₃, KOH and KOH with IPA) and deposited with PECVD SiN_x:H films, the acid HNO₃ textured wafers showed the highest bulk lifetime, while the alkaline KOH textured ones showed the lowest surface recombination velocity (SRV). With the advantage of bulk lifetime improvement from acid textured surface, an additional passivation process via the template of acid textured surface prior to KOH or KOH+IPA texturing was testified to be able to enhance bulk lifetime and reduce SRV of wafers. Besides bulk lifetime and SRV, the density of interface trap (D_it) also shows the same correlation with the passivation performance mentioned above, as revealed by CV measurement in this study.

Keywords

interface states; passivation; plasma CVD; silicon compounds; solar cells; surface recombination; surface texture; PECVD films; SiN:H; acid textured surface; bulk lifetime; hydrogen passivation; interface trap; light trapping; optical performance; passivation performance; passivation process; solar cell manufacturing; surface recombination velocity; surface texturing; Chemicals; Etching; Films; Passivation; Silicon; Surface texture;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6186231

Filename

6186231