Title :
Effects of thermal annealing on Ga0.3In0.7NxAs1-x QDs grown on GaAs [001]
Author :
Nishikawa, A. ; Hong, Y.G. ; Tu, C.W.
Author_Institution :
Dept. of Electr. & Comput. Sci. Eng., California Univ., La Jolla, CA, USA
Abstract :
Effects of thermal annealing on Ga0.3In0.7NxAs1-x quantum dots (QDs) grown on GaAs [001] have been investigated. The improvement of the optical properties of Ga0.3In0.7NxAs1-x QDs is observed as a result of rapid thermal annealing or in situ annealing. In general, increasing annealing time or temperature improves the photoluminescence (PL) intensity but results in a blue shift of the peak due to interdiffusion of Ga and In. However, when the annealing time is short and annealing temperature is low enough to prevent the interdiffusion, the PL intensity can be increased without a blue shift of the peak. The improvement of the PL intensity of Ga0.3In0.7NxAs1-x QDs is much more than that of GaInAs QDs, because the N-containing sample has many more non-radiative recombination centers such as point defects, which can be reduced by thermal annealing.
Keywords :
III-V semiconductors; chemical interdiffusion; gallium compounds; indium compounds; narrow band gap semiconductors; nitrogen compounds; photoluminescence; point defects; rapid thermal annealing; semiconductor quantum dots; spectral line shift; Ga0.3In0.7NxAs1-x; GaAs; annealing temperature; annealing time; blue shift; in situ annealing; interdiffusion; nonradiative recombination centers; optical properties; photoluminescence intensity; point defects; quantum dots; rapid thermal annealing; Gallium arsenide; Nitrogen; Optical materials; Photoluminescence; Plasma temperature; Quantum dot lasers; Radiative recombination; Rapid thermal annealing; Stimulated emission; Substrates;
Conference_Titel :
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN :
0-7803-8614-0
DOI :
10.1109/ISCSPC.2003.1354431
