Title :
A 32nm 8.3GHz 64-entry × 32b variation tolerant near-threshold voltage register file
Author :
Agarwal, Amit ; Hsu, Steven ; Mathew, Sanu ; Anders, Mark ; Kaul, Himanshu ; Sheikh, Farhana ; Krishnamurthy, Ram
Author_Institution :
Circuits Res. Labs., Intel Corp., Hillsboro, OR, USA
Abstract :
This paper describes a 64-entry × 32b 1-read, 1-write ported register file with measured 8.3GHz operation consuming 83mW, fabricated in 1.0V 32nm CMOS. Contention-free shared keeper circuits combined with variation tolerant dual-ended transmission gate write memory cells enable 300mV Vcc-min reduction and measured scalable near-threshold voltage operation to 340mV with energy efficiency of 550GOPS/W.
Keywords :
CMOS memory circuits; digital storage; 1-read 1-write ported register file; CMOS; contention-free shared keeper circuits; energy efficiency; frequency 8.3 GHz; power 83 mW; scalable near-threshold voltage operation; size 32 nm; variation tolerant dual-ended transmission gate write memory cells; variation tolerant near-threshold voltage register file; voltage 1 V; CMOS integrated circuits; Delay; Frequency measurement; Logic gates; Noise; Registers; Voltage measurement;
Conference_Titel :
VLSI Circuits (VLSIC), 2010 IEEE Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4244-5454-9
DOI :
10.1109/VLSIC.2010.5560334
