Title :
Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy
Author :
Wang, J.-B. ; Johnson, S.R. ; Chaparro, S.A. ; Ding, D. ; Cao, Y. ; Sadofyev, Yu.G. ; Zhang, Y.-H. ; Gupta, J.A. ; Guo, C.-Z.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
Photoluminescence spectroscopy was observed for a set of Al0.5Ga0.5As/AlxGa1-xAs/GaAs0.643Sb0.357/Alx Ga1-xAs/Al0.5Ga0.5As 5-layer quantum wells with different Al mole fraction x (different conduction band barrier heights Ex= Ec(AlxGa1-xAs) - Ec(GaAs)). The theoretical calculation and the data fitting for the experimental data show the conduction band offset of GaAs0.643Sb0.357/GaAs heterojunction is almost flat (weak type I), ΔEc = Ec(GaAs) - Ec(GaAsSb) = 13 ± 13 meV and the bandgap bowing parameter for strained GaAsSb is -1.58 ± 0.01 eV.
Keywords :
III-V semiconductors; conduction bands; energy gap; gallium arsenide; photoluminescence; semiconductor quantum wells; -1.57 to -1.59 eV; 0 to 26 MeV; Al0.5Ga0.5As-AlxGa1-xAs-GaAs0.643Sb0.357-AlxGa1-xAs-Al0.5Ga0.5As; bandgap bowing parameter; conduction band barrier heights; heterojunction band offset; mole fraction; photoluminescence spectroscopy; quantum wells; Gallium arsenide; Heterojunctions; Laser transitions; Photoluminescence; Photonic band gap; Spectroscopy; Substrates; Temperature; Vertical cavity surface emitting lasers; X-ray scattering;
Conference_Titel :
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN :
0-7803-8614-0
DOI :
10.1109/ISCSPC.2003.1354433
