Determination of GaAsSb/GaAs heterojunction band offset by photoluminescence spectroscopy

Author

Wang, J.-B. ; Johnson, S.R. ; Chaparro, S.A. ; Ding, D. ; Cao, Y. ; Sadofyev, Yu.G. ; Zhang, Y.-H. ; Gupta, J.A. ; Guo, C.-Z.

Author_Institution

Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

66

Lastpage

71

Abstract

Photoluminescence spectroscopy was observed for a set of Al_0.5Ga0.5As/Al_xGa_1-xAs/GaAs_0.643Sb_0.357/Al_x Ga_1-xAs/Al_0.5Ga_0.5As 5-layer quantum wells with different Al mole fraction x (different conduction band barrier heights E_x= E_c(Al_xGa_1-xAs) - E_c(GaAs)). The theoretical calculation and the data fitting for the experimental data show the conduction band offset of GaAs_0.643Sb_0.357/GaAs heterojunction is almost flat (weak type I), ΔE_c = E_c(GaAs) - E_c(GaAsSb) = 13 ± 13 meV and the bandgap bowing parameter for strained GaAsSb is -1.58 ± 0.01 eV.

Keywords

III-V semiconductors; conduction bands; energy gap; gallium arsenide; photoluminescence; semiconductor quantum wells; -1.57 to -1.59 eV; 0 to 26 MeV; Al_0.5Ga_0.5As-Al_xGa_1-xAs-GaAs_0.643Sb_0.357-Al_xGa_1-xAs-Al_0.5Ga_0.5As; bandgap bowing parameter; conduction band barrier heights; heterojunction band offset; mole fraction; photoluminescence spectroscopy; quantum wells; Gallium arsenide; Heterojunctions; Laser transitions; Photoluminescence; Photonic band gap; Spectroscopy; Substrates; Temperature; Vertical cavity surface emitting lasers; X-ray scattering;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on

Print_ISBN

0-7803-8614-0

Type

conf

DOI

10.1109/ISCSPC.2003.1354433

Filename

1354433