Title :
A low power, low noise 3nV/√Hz 200fA/√Hz, rapid settling instrumentation amplifier with sub-ppm nonlinearity, 0.2µV/°C max offset drift, 150dB CMRR in 5-to-36V supply
Author :
Gerstenhaber, Moshe ; Qirko, Oljeta Bida
Author_Institution :
Analog Devices, Inc., Wilmington, MA, USA
fDate :
Sept. 30 2013-Oct. 3 2013
Abstract :
An instrumentation amplifier with 3nV/√Hz and 200fA/√Hz RTI noise, 20MHz bandwidth, 40V/μs slew rate, consumes 2mA from a ±2.5V to ±18V supply range. Its high gain CMRR of greater than 150dB and its unity gain error of less than 0.01% extend over temperatures from -55°C to 150°C. It has a sub-ppm load independent gain nonlinearity (THD <; -125dBc) for its full output range, from DC to 2 kHz. Vosi distribution is within ±25μV, drifting less than 0.2μV/°C from -55°C to 150°C. Settling time is less than 0.6μs to 10ppm of a 10V output step. The amplifier is designed in an SOI complementary bipolar process with a die size of 3.3mm2.
Keywords :
bipolar analogue integrated circuits; instrumentation amplifiers; low noise amplifiers; low-power electronics; silicon-on-insulator; SOI complementary bipolar process; load independent gain nonlinearity; low noise amplifier; low power amplifier; rapid settling instrumentation amplifier; temperature -55 C to 150 C; voltage 5 V to 36 V; Instruments; Limiting; Temperature distribution; Transistors; distortion; gain nonlinearity; high CMRR; high voltage amplifier; instrumentation amplifier; low drift; low noise; precision amplifier;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4799-0126-5
DOI :
10.1109/BCTM.2013.6798178
