DocumentCode
1863040
Title
A high-speed cryogenic SiGe channel combiner IC for large photon-starved SNSPD arrays
Author
Bardin, Joseph C. ; Ravindran, Prasana ; Su-Wei Chang ; Kumar, Ravindra ; Stern, J.A. ; Shaw, Matthew D. ; Russell, Damon S. ; Farr, W.H.
Author_Institution
Dept. of Electr. & Comput. Eng., Univ. of Massachusetts Amherst, Amherst, MA, USA
fYear
2013
fDate
Sept. 30 2013-Oct. 3 2013
Firstpage
215
Lastpage
218
Abstract
In this paper, the design and characterization of a cryogenic eight-channel pixel combiner circuit designed to readout superconducting nanowire single photon detectors (SNSPDs) is presented. The circuit is designed to amplify, digitize, edge detect, and combine the output signals of an array of eight SNSPDs. The design has been enabled by the development of novel large-signal cryogenic HBT simulation models. The circuit has been fabricated and measurement results demonstrate excellent agreement with simulation.
Keywords
BiCMOS integrated circuits; Ge-Si alloys; cryogenic electronics; heterojunction bipolar transistors; nanowires; photon counting; readout electronics; sensor arrays; signal conditioning circuits; superconducting photodetectors; HBT simulation models; SiGe; cryogenic eight-channel pixel combiner circuit; high-speed cryogenic channel combiner IC; large photon-starved SNSPD arrays; large-signal cryogenic simulation models; superconducting nanowire single photon detectors; Clocks; Cryogenics; Detectors; Integrated circuit modeling; Photonics; Silicon germanium;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location
Bordeaux
ISSN
1088-9299
Print_ISBN
978-1-4799-0126-5
Type
conf
DOI
10.1109/BCTM.2013.6798179
Filename
6798179
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