DocumentCode :
1863044
Title :
Passivation effect of heterojunction solar cells by amorphous silicon oxide film manufactured using silane and nitrous oxide
Author :
Kim, Deok Yeol ; Jung, Jin Hyuk ; Jang, Jin
Author_Institution :
Dept. of Inf. Display, Kyung Hee Univ., Seoul, South Korea
fYear :
2011
fDate :
19-24 June 2011
Abstract :
Hydrogenated amorphous silicon oxide (a-SiO:H) deposited by plasma-enhanced chemical vapor deposition(PECVD) using a mixture of silane (SiH4), hydrogen (H2), and nitrous oxide (N2O) at a low substrate temperature were used as passivation layers for heterojunction solar cells. The ratio of SiH4 to N2O and annealing time were optimized. The heterojunction solar cells manufactured under the optimum conditions exhibited the power conversion efficiency of >;17 %.
Keywords :
annealing; hydrogen; nitrogen compounds; passivation; plasma CVD; silicon compounds; solar cells; H2; N2O; SiH4; amorphous silicon oxide film; annealing time; heterojunction solar cells; nitrous oxide; passivation effect; plasma-enhanced chemical vapor deposition; power conversion efficiency; silane; Annealing; Films; Heterojunctions; Passivation; Photovoltaic cells; Plasma temperature; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186235
Filename :
6186235
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1863044
بازگشت