Title :
Electron spin splitting in polarization-doped III-nitrides
Author_Institution :
Wave Band Corp., Irvine, CA, USA
Abstract :
The Rashba spin-orbit splitting parameter has been calculated in wurtzite GaN/AlGaN heterostructures. Due to the strong polarization field at the interface and polarization-induced doping, the electron spin-split energy in GaN/AlGaN heterostructure is predicted to have the same order of magnitude as in narrow-gap III-V materials. This could make the GaN-based material system competitive in spintronic applications.
Keywords :
III-V semiconductors; aluminium compounds; ferromagnetic materials; gallium compounds; narrow band gap semiconductors; semiconductor doping; spin polarised transport; spin-orbit interactions; GaN-AlGaN; Rashba spin-orbit splitting parameter; electron spin splitting; electron spin-split energy; narrow-gap III-V materials; polarization-doped III-nitrides; polarization-induced doping; spintronic applications; wurtzite GaN-AlGaN heterostructures; Crystals; Doping; Electrons; Gallium nitride; HEMTs; Magnetoelectronics; Photonic band gap; Polarization; Quantum computing; Semiconductor materials;
Conference_Titel :
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN :
0-7803-8614-0
DOI :
10.1109/ISCSPC.2003.1354437
