DocumentCode
1863074
Title
Electron spin splitting in polarization-doped III-nitrides
Author
Litvinov, V.I.
Author_Institution
Wave Band Corp., Irvine, CA, USA
fYear
2003
fDate
25-27 Aug. 2003
Firstpage
90
Lastpage
95
Abstract
The Rashba spin-orbit splitting parameter has been calculated in wurtzite GaN/AlGaN heterostructures. Due to the strong polarization field at the interface and polarization-induced doping, the electron spin-split energy in GaN/AlGaN heterostructure is predicted to have the same order of magnitude as in narrow-gap III-V materials. This could make the GaN-based material system competitive in spintronic applications.
Keywords
III-V semiconductors; aluminium compounds; ferromagnetic materials; gallium compounds; narrow band gap semiconductors; semiconductor doping; spin polarised transport; spin-orbit interactions; GaN-AlGaN; Rashba spin-orbit splitting parameter; electron spin splitting; electron spin-split energy; narrow-gap III-V materials; polarization-doped III-nitrides; polarization-induced doping; spintronic applications; wurtzite GaN-AlGaN heterostructures; Crystals; Doping; Electrons; Gallium nitride; HEMTs; Magnetoelectronics; Photonic band gap; Polarization; Quantum computing; Semiconductor materials;
fLanguage
English
Publisher
ieee
Conference_Titel
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN
0-7803-8614-0
Type
conf
DOI
10.1109/ISCSPC.2003.1354437
Filename
1354437
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