Impact of laser hole drilling on the breakage rate of multicrystalline silicon wafers

Author

Lee, Kyumin ; Lim, Jong-Keun ; Kim, Sang-Kyun ; Moon, In-Sik ; Seo, Jae-Won ; Lee, Won-jae ; Cho, Eun-Chel

Author_Institution

Hyundai Electro-Mech. Res. Inst. (HEMRI), Hyundai Heavy Ind. Co. Ltd., Yongin, South Korea

fYear

2011

fDate

19-24 June 2011

Abstract

We have studied the effect of laser hole drilling on the breakage rate of multicrystalline silicon (mc-Si) wafers, with the objective of investigating the production cost of metal wrap-through (MWT) solar cells. Wafers were grouped according to the number of holes (0, 100, and 300), and the breakage force was measured by a plate-twist apparatus. Failure analysis shows that, while the wafers with holes are weaker after the laser drilling, the fracture strength is restored after a standard HF-HNO₃ wet etch.

Keywords

drilling; elemental semiconductors; etching; failure analysis; force measurement; fracture toughness; industrial economics; laser beam machining; silicon; solar cells; MWT solar cells; Si; breakage force measurement; breakage rate; failure analysis; fracture strength; laser hole drilling impact; mc-Si wafers; metal wrap-through solar cells; multicrystalline silicon wafers; plate-twist apparatus; production cost; standard HF-HNO₃ wet etching; Europe; Face; Failure analysis; Lasers; Metals; Photovoltaic cells; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6186237

Filename

6186237