DocumentCode :
1863092
Title :
Impact of laser hole drilling on the breakage rate of multicrystalline silicon wafers
Author :
Lee, Kyumin ; Lim, Jong-Keun ; Kim, Sang-Kyun ; Moon, In-Sik ; Seo, Jae-Won ; Lee, Won-jae ; Cho, Eun-Chel
Author_Institution :
Hyundai Electro-Mech. Res. Inst. (HEMRI), Hyundai Heavy Ind. Co. Ltd., Yongin, South Korea
fYear :
2011
fDate :
19-24 June 2011
Abstract :
We have studied the effect of laser hole drilling on the breakage rate of multicrystalline silicon (mc-Si) wafers, with the objective of investigating the production cost of metal wrap-through (MWT) solar cells. Wafers were grouped according to the number of holes (0, 100, and 300), and the breakage force was measured by a plate-twist apparatus. Failure analysis shows that, while the wafers with holes are weaker after the laser drilling, the fracture strength is restored after a standard HF-HNO3 wet etch.
Keywords :
drilling; elemental semiconductors; etching; failure analysis; force measurement; fracture toughness; industrial economics; laser beam machining; silicon; solar cells; MWT solar cells; Si; breakage force measurement; breakage rate; failure analysis; fracture strength; laser hole drilling impact; mc-Si wafers; metal wrap-through solar cells; multicrystalline silicon wafers; plate-twist apparatus; production cost; standard HF-HNO3 wet etching; Europe; Face; Failure analysis; Lasers; Metals; Photovoltaic cells; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location :
Seattle, WA
ISSN :
0160-8371
Print_ISBN :
978-1-4244-9966-3
Type :
conf
DOI :
10.1109/PVSC.2011.6186237
Filename :
6186237
Link To Document :
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