Title :
A 2GSps 12bit DAC with SFDR >57.5dBc up to Nyquist bandwidth
Author :
Lei Zhou ; Danyu Wu ; Fan Jiang ; Jin Wu ; Zhi Jin ; Xinyu Liu
Author_Institution :
Inst. of Microelectron., Beijing, China
fDate :
Sept. 30 2013-Oct. 3 2013
Abstract :
In this paper we present a 2GSps 12bit current steering digital-to-analog converter (DAC), in 100G Ft 0.18μm SiGe HBT technology. An improved switching sequence is proposed to compensate the gradient error and reduce the impact of cell-dependent-delay-variation. According to measured results, the test chip achieved a DNL/INL of 0.6/0.95 LSB respectively. The measured SFDR at low frequency is above 72dBc, and the lowest SFDR up to Nyquist frequency is above 57.5dBc.
Keywords :
Ge-Si alloys; digital-analogue conversion; heterojunction bipolar transistors; integrated circuit design; DAC; HBT technology; Nyquist bandwidth; SiGe; cell -dependent delay variation; current steering digital to analog converter; gradient error; size 0.18 mum; switching sequence; Bandwidth; CMOS integrated circuits; CMOS technology; Delays; Layout; Silicon germanium; Switches; SiGe; current steering; digital-to-analog converter; spurious-free-dynamic-range;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4799-0126-5
DOI :
10.1109/BCTM.2013.6798180
