Title :
Dark current reduction in InGaAs metal-semiconductor-metal photodetectors with coplanar waveguide transmission lines
Author :
Junghwan Kim ; Lee, K.J. ; Johnson, F.G. ; Johnson, W.B. ; Lee, C.H.
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
Abstract :
Summary form only given. InGaAs metal-semiconductor-metal (MSM) photodetectors are one of the promising devices for 1.55 /spl mu/m lightwave communication systems because of their high-speed performance derived from the low capacitance per unit area. The low dark current and the large signal-to-noise ratio (SNR) are essential for high performance devices. For high-speed application, it is desired to embed MSM photodetector in coplanar wave-guide (CPW) transmission lines. However, one needs to overcome the relative large dark currents resulting from the proximity of the signal line and ground lines. In the study, we describe the effects of etching the epilayers between the signal line and ground lines of a CPW and increasing Schottky barrier enhancement layer thickness on the dark current and gain asymmetry.
Keywords :
III-V semiconductors; dark conductivity; etching; gallium arsenide; indium compounds; infrared detectors; metal-semiconductor-metal structures; molecular beam epitaxial growth; optical communication equipment; optical planar waveguides; photodetectors; semiconductor epitaxial layers; semiconductor growth; 1.55 mum; InGaAs; InGaAs metal-semiconductor-metal photodetectors; MSM photodetectors; Schottky barrier enhancement layer thickness; coplanar waveguide transmission lines; dark current; dark current reduction; epilayers; etching; gain asymmetry; ground line; high performance devices; high-speed application; high-speed performance; lightwave communication systems; low capacitance per unit area; metal-semiconductor-metal photodetectors; signal line; signal-to-noise ratio; Coplanar transmission lines; Coplanar waveguides; Dark current; Etching; Fingers; Indium gallium arsenide; Molecular beam epitaxial growth; Photodetectors; Schottky barriers; Transmission lines;
Conference_Titel :
Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
1-55752-595-1
DOI :
10.1109/CLEO.1999.833934
