• DocumentCode
    1863122
  • Title

    Impact of BEOL stress on BiCMOS9MW HBTs

  • Author

    Canderle, E. ; Chevalier, P. ; Avenier, G. ; Derrier, N. ; Celi, D. ; Gaquiere, Christopher

  • Author_Institution
    STMicroelectron., Crolles, France
  • fYear
    2013
  • fDate
    Sept. 30 2013-Oct. 3 2013
  • Firstpage
    223
  • Lastpage
    226
  • Abstract
    Stress investigations have been carried out on SiGe HBTs from STMicroelectronics BiCMOS9MW technology. The strain created by the stack of metal connections impacts the base bandgap of the transistors: from the reference to the denser dummies structure, a 9.1 meV bandgap energy variation is pointed out. Dummies structures were embedded for both DC and HF characterizations which showed a 25% increase for the collector current, and a 21% and 12% increase for the transit frequencies fT and fMAX respectively.
  • Keywords
    BiCMOS integrated circuits; Ge-Si alloys; energy gap; heterojunction bipolar transistors; BEOL stress; BiCMOS9MW HBTs; STMicroelectronics BiCMOS9MW technology; SiGe; bandgap energy variation; denser dummies structure; electron volt energy 9.1 meV; metal connections impacts; transistor base bandgap; Equations; Integrated circuits; Metals; Photonic band gap; Silicon germanium; Strain; Stress; BiCMOS; SiGe HBT; back-end of line (BEOL); bandgap; stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
  • Conference_Location
    Bordeaux
  • ISSN
    1088-9299
  • Print_ISBN
    978-1-4799-0126-5
  • Type

    conf

  • DOI
    10.1109/BCTM.2013.6798181
  • Filename
    6798181
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1863122