Title :
SiGe HBTs in 90nm BiCMOS technology demonstrating 300GHz/420GHz fT/fMAX through reduced Rb and Ccb parasitics
Author :
Camillo-Castillo, R.A. ; Liu, Q.Z. ; Adkisson, J.W. ; Khater, Marwan H. ; Gray, P.B. ; Jain, Vinesh ; Leidy, R.K. ; Pekarik, John J. ; Gambino, Jeffrey P. ; Zetterlund, B. ; Willets, C. ; Parrish, C. ; Engelmann, Sebastian U. ; Pyzyna, A.M. ; Cheng, Peng
Author_Institution :
Microelectron. Div., IBM, Essex Junction, VT, USA
fDate :
Sept. 30 2013-Oct. 3 2013
Abstract :
Scaling both the fT and the fMAX of SiGe HBTs is quite challenging due to the opposing physical device requirements for improving these figures of merit. In this paper, millisecond anneal techniques, low temperature silicide and low temperature contact processes are shown to be effective in reducing the base resistance. These processes when combined with a novel approach to address the collector-base capacitance are shown to produce high performance SiGe HBT devices which demonstrate operating frequencies of 300/420GHz fT/fMAX. This is the first report of 90nm SiGe BICMOS with an fMAX exceeding 400GHz.
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; annealing; capacitance; electric resistance; heterojunction bipolar transistors; low-temperature techniques; submillimetre wave integrated circuits; submillimetre wave transistors; BiCMOS technology; HBT; SiGe; base resistance; collector-base capacitance; frequency 300 GHz; frequency 420 GHz; heterojunction bipolar transistors; low temperature contact processes; low temperature silicide; millisecond anneal techniques; size 90 nm; BiCMOS integrated circuits; Capacitance; Nickel alloys; Performance evaluation; Resistance; Silicides; Silicon germanium; BiCMOS; Heterojunction Bipolar Transistors (HBT); Silicon Germanium (SiGe); base resistance; collector-base junction capacitance; millisecond anneal;
Conference_Titel :
Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE
Conference_Location :
Bordeaux
Print_ISBN :
978-1-4799-0126-5
DOI :
10.1109/BCTM.2013.6798182
