A high-resistivity SiGe BiCMOS technology for WiFi RF front-end-IC solutions

Author

Joseph, Alvin ; Gambino, J. ; Rassel, Robert M. ; Johnson, Eric ; Ding, Han ; Parthasarthy, Shyam ; Vanakuru, Venkata ; Sharma, Shantanu ; Jaffe, Matt ; Liu, Deming ; Zierak, Michael ; Camillo-Castillo, Renata ; Stamper, Anthony ; Dunn, James

Author_Institution

Microelectron. Div., IBM, Essex Junction, VT, USA

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

231

Lastpage

234

Abstract

We present for the first time a novel high resistivity bulk SiGe BiCMOS technology that has been optimized for a WiFi RF front-end-IC (FEIC) integration. A nominally 1000 Ohm-cm p-type silicon substrate is utilized to integrate several SiGe HBTs for power amplifiers (PAs), a SiGe HBT low-noise amplifier (LNA), and isolated nFET RF switch device. Process elements include trench isolation for low-loss passives and reduced parasitic coupling, and a lower-resistivity region for the FETs to minimize changes to the circuit library.

Keywords

BiCMOS integrated circuits; Ge-Si alloys; radiofrequency integrated circuits; wireless LAN; HBT; SiGe; WiFi RF front end IC solutions; high resistivity BiCMOS technology; isolated nFET RF switch device; low loss passives; low noise amplifier; power amplifiers; reduced parasitic coupling; trench isolation; BiCMOS integrated circuits; Conductivity; Heterojunction bipolar transistors; Radio frequency; Silicon germanium; Substrates; Switches; High-resistivity; SiGe BiCMOS; front-end-IC;

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798183

Filename

6798183