Investigation of quantum effects in monolithic integrated circuits based on RTDs and HEMTs with a quantum hydrodynamic transport model

This paper describes the first reported numerical simulations of monolithic integrated circuits of resonant tunneling structures and high electron mobility transistors based on In_0.53Ga_0.47As/In_0.52Al_0.48As/InP with a quantum hydrodynamic transport model (QHD-Model). For the numerical investigations the device simulator SIMBA is used, which is capable to handle complex device geometries as well as various physical models represented by certain sets of partial differential equations. As a new feature the involvement of a quantum potential is implemented to include quantum mechanical transport phenomena in different quantum size devices. The coupled solution of this quantum correction potential with a hydrodynamic transport model allows to model resonant tunneling of electrons through potential barriers and particle build up in potential wells. Different structure variations, especially the resonant tunneling diode area and the gate width of the HEMT structure show variable modulations in the output characteristics of the monolithic integrated device.