A study of ultra-high performance SiGe HBT devices on SOI

Author

Thibeault, Todd ; Preisler, E. ; Jie Zheng ; Li Dong ; Chaudhry, S. ; Jordan, Stewart ; Racanelli, M.

Author_Institution

TowerJazz, Newport Beach, CA, USA

fYear

2013

fDate

Sept. 30 2013-Oct. 3 2013

Firstpage

235

Lastpage

238

Abstract

The authors present a study of SiGe HBTs with F_T>200GHz on an SOI substrate for the first time. The devices built on SOI exhibit a degradation of approximately 7 Ghz in Ft as compared with bulk devices while Fmax remains near 280 GHz. As expected, Ccs is reduced by ~ 40%. A loss of about 0.75 V in safe operating area is observed for the HBTs built on SOI, but approximately half of this can be regained by allowing the footprint to increase to the original, bulk-silicon HBT footprint by increasing the spacing from the collector to the deep trench isolation.

Keywords

heterojunction bipolar transistors; isolation technology; millimetre wave bipolar transistors; silicon-on-insulator; HBT devices; HBT footprint; SOI; collector spacing; deep trench isolation; safe operating area; Heterojunction bipolar transistors; Performance evaluation; Semiconductor optical amplifiers; Silicon; Silicon germanium; Silicon-on-insulator; Substrates; BiCMOS; safe operating area (SOA); silicon germanium (SiGe); silicon on insulator (SOI);

fLanguage

English

Publisher

ieee

Conference_Titel

Bipolar/BiCMOS Circuits and Technology Meeting (BCTM), 2013 IEEE

Conference_Location

Bordeaux

ISSN

1088-9299

Print_ISBN

978-1-4799-0126-5

Type

conf

DOI

10.1109/BCTM.2013.6798184

Filename

6798184