Title :
Frequency and breakdown properties of AlGaN/GaN HEMTs
Author :
Vertiatchikh, A. ; Schaff, W.J. ; Eastman, L.F. ; Matulionis, A.
Author_Institution :
Sch. of Electr. & Comput. Eng., Cornell Univ., Ithaca, NY, USA
Abstract :
AlGaN/GaN heterostructure transistors show potential in high frequency high-power applications because of their high breakdown voltages and high electron saturation velocities. The operating drain voltage, limiting the maximum RF output power, should be lower than breakdown voltage of the device. The frequency and breakdown properties of the AlGaN/GaN heterostructure transistors have been studied.
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; gallium compounds; high electron mobility transistors; semiconductor heterojunctions; AlGaN-GaN; HEMT; RF output power; breakdown properties; breakdown voltages; drain voltage; electron saturation velocities; frequency properties; heterostructure transistors; high-power applications; Aluminum gallium nitride; Breakdown voltage; Electric breakdown; Electrons; Gallium nitride; HEMTs; MODFETs; Optical modulation; Phonons; Radio frequency;
Conference_Titel :
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN :
0-7803-8614-0
DOI :
10.1109/ISCSPC.2003.1354444
