Title :
Effects of device design on the thermal properties of HBTs
Author :
Li, J.C. ; Asbeck, P.M. ; Hussain, T. ; Hitko, D. ; Fields, C. ; Sokolich, M.
Author_Institution :
California Univ., San Diego, CA, USA
Abstract :
Thermal management is of critical concern in high performance InP-based HBTs, because enhancements in RF performance are typically obtained with increased current density and aggressive device scaling. The resulting increase in junction temperature can degrade carrier transport and negatively affect overall device reliability. This paper reports an investigation of thermal resistance in InP-based HBTs with various vertical and lateral designs. Three-dimensional simulations and experimental results illustrate that significant differences in thermal resistance can arise with relatively small changes in device structure.
Keywords :
III-V semiconductors; current density; heterojunction bipolar transistors; indium compounds; semiconductor device reliability; thermal resistance; HBT; InP; carrier transport; current density; device design; device reliability; device scaling; device structure; junction temperature; lateral design; thermal management; thermal properties; thermal resistance; vertical design; Computational modeling; Current density; Dielectric substrates; Heterojunction bipolar transistors; Kirk field collapse effect; Radio frequency; Temperature; Thermal degradation; Thermal management; Thermal resistance;
Conference_Titel :
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN :
0-7803-8614-0
DOI :
10.1109/ISCSPC.2003.1354445
