Title :
Analytical charge conservative large signal model for MODFETs validated up to MM-wave range
Author :
Osorio, R. ; Berroth, M. ; Marsetz, W. ; Verweyen, L. ; Demmler, M. ; Massler, H. ; Neumann, M. ; Schlechtweg, M.
Author_Institution :
Fraunhofer Inst. for Appl. Solid State Phys., Freiburg, Germany
Abstract :
We present an analytical charge conservative large signal model for MODFETs, which is valid up to MM-wave frequencies. Although the model equations are simple, an excellent accuracy in the representation of the nonlinear elements of the FET is achieved. The model was used for the successful design of a 2-stage power amplifier for 60 GHz.
Keywords :
high electron mobility transistors; 60 GHz; HEMT; MM-wave range; MODFETs; analytical large signal model; charge conservative model; model equations; nonlinear elements; Current measurement; Diodes; Frequency; HEMTs; MODFETs; Nonlinear equations; Power amplifiers; Scattering parameters; Signal analysis; Signal design;
Conference_Titel :
Microwave Symposium Digest, 1998 IEEE MTT-S International
Conference_Location :
Baltimore, MD, USA
Print_ISBN :
0-7803-4471-5
DOI :
10.1109/MWSYM.1998.705063
