DocumentCode
1863329
Title
Numerical simulation and modeling of rear point contact solar cells
Author
Zanuccoli, M. ; De Rose, R. ; Magnone, P. ; Frei, M. ; Guo, H.-W. ; Agrawal, M. ; Sangiorgi, E. ; Fiegna, C.
Author_Institution
DEIS, Univ. of Bologna, Cesena, Italy
fYear
2011
fDate
19-24 June 2011
Abstract
High efficiency silicon monocrystalline solar cells commonly adopt point contacted rear surfaces to reduce the recombination losses in the rear side of the device. However, the reduction of the rear contact surface leads to an increase of series resistance losses. Modeling and analysis of rear point contact solar cells is strategic to optimize the device design by taking into account several competing physical mechanisms. Owing to their complicated geometries, the analysis of these devices requires three-dimensional (3-D) numerical simulation. In this work we analyze the influence of the most important geometrical and electrical parameters on the conversion efficiency of rear point contact solar cells.
Keywords
elemental semiconductors; numerical analysis; silicon; solar cells; Si; electrical parameters; geometrical parameters; monocrystalline solar cells; numerical modeling; rear point contact solar cells; recombination losses; series resistance losses; three-dimensional numerical simulation; Conductivity; Doping; Metallization; Numerical models; Photovoltaic cells; Semiconductor process modeling; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE
Conference_Location
Seattle, WA
ISSN
0160-8371
Print_ISBN
978-1-4244-9966-3
Type
conf
DOI
10.1109/PVSC.2011.6186248
Filename
6186248
Link To Document