AlGaN-GaN HEMTs: material, device, circuit technology and applications

Author

Parikh, P. ; Wu, Y.-F. ; Chavarkar, P. ; Moore, M. ; Mishra, U.K. ; Sheppard, S. ; Smith, R.P. ; Saxler, A. ; Pribble, W. ; Allen, S. ; Milligan, J. ; Palmour, J.

Author_Institution

Santa Barbara Technol. Center, Durham, NC, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

164

Lastpage

171

Abstract

The enabling features and performance of GaN based HEMTs as a high power, high bandwidth semiconductor technology are presented. Progress on materials development includes the development of AlGaN and AlN barrier HEMTs with room temperature electron mobility exceeding 2000 cm²/V-s. Trap free GaN HEMT devices with > 10 W/mm power density and devices with > 70 % efficiency are presented. Operation at > 200 °C is reported. Simultaneous linearity and efficiency under class B is presented followed by discussion of mm-wave power performance. Finally, device scaling resulting in a total power > 100 Watts and GaN HEMT circuit demonstrations are presented including mm-wave amplifier with > 3 Watts at 30 GHz and 35 GHz.

Keywords

III-V semiconductors; aluminium compounds; electron mobility; gallium compounds; high electron mobility transistors; millimetre wave amplifiers; wide band gap semiconductors; 20 degC; 30 GHz; 35 GHz; AlGaN-GaN; HEMT; circuit technology; device scaling; electron mobility; high bandwidth semiconductor technology; mm-wave amplifier; mm-wave power performance; power density; room temperature; trap free HEMT devices; Aluminum gallium nitride; Bandwidth; Circuits; Electron mobility; Electron traps; Gallium nitride; HEMTs; MODFETs; Semiconductor materials; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on

Print_ISBN

0-7803-8614-0

Type

conf

DOI

10.1109/ISCSPC.2003.1354449

Filename

1354449