Low threshold, CW, room temperature 1.50 μm GaAS-based lasers

Author

Bank, S.R. ; Wistey, M.A. ; Yuen, H.B. ; Goddard, L.L. ; Harris, J.S., Jr.

Author_Institution

Solid State & Photonics Lab., Stanford Univ., CA, USA

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

180

Lastpage

184

Abstract

We present the first continuous wave (CW) 1.50 μm lasers grown on GaAs substrates. These GaInNAsSb lasers operated CW at room temperature with threshold current densities as low as 1.06 kA/cm² and output powers as high as 140 mW. Peak output power was limited by thermal dissipation and up to 670 mW was obtained under pulsed conditions. The CW slope efficiency was 0.26 W/A, corresponding to an external quantum efficiency of 31%. The lasers also featured high CW characteristic temperatures of 139 K over the range 10-60 °C, making them ideal for use in uncooled optical communication networks.

Keywords

III-V semiconductors; current density; gallium arsenide; laser transitions; optical communication equipment; semiconductor lasers; 1.50 micron; 10 to 60 degC; 139 K; 31 percent; CW lasers; GaAs; GaAs-based lasers; GaInNAsSb; optical communication networks; output powers; quantum efficiency; room temperature; slope efficiency; thermal dissipation; threshold current densities; Gallium arsenide; Gold; Power generation; Quantum well lasers; Solid lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers; Waveguide lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on

Print_ISBN

0-7803-8614-0

Type

conf

DOI

10.1109/ISCSPC.2003.1354451

Filename

1354451