Title :
Low threshold, CW, room temperature 1.50 μm GaAS-based lasers
Author :
Bank, S.R. ; Wistey, M.A. ; Yuen, H.B. ; Goddard, L.L. ; Harris, J.S., Jr.
Author_Institution :
Solid State & Photonics Lab., Stanford Univ., CA, USA
Abstract :
We present the first continuous wave (CW) 1.50 μm lasers grown on GaAs substrates. These GaInNAsSb lasers operated CW at room temperature with threshold current densities as low as 1.06 kA/cm2 and output powers as high as 140 mW. Peak output power was limited by thermal dissipation and up to 670 mW was obtained under pulsed conditions. The CW slope efficiency was 0.26 W/A, corresponding to an external quantum efficiency of 31%. The lasers also featured high CW characteristic temperatures of 139 K over the range 10-60 °C, making them ideal for use in uncooled optical communication networks.
Keywords :
III-V semiconductors; current density; gallium arsenide; laser transitions; optical communication equipment; semiconductor lasers; 1.50 micron; 10 to 60 degC; 139 K; 31 percent; CW lasers; GaAs; GaAs-based lasers; GaInNAsSb; optical communication networks; output powers; quantum efficiency; room temperature; slope efficiency; thermal dissipation; threshold current densities; Gallium arsenide; Gold; Power generation; Quantum well lasers; Solid lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers; Waveguide lasers;
Conference_Titel :
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN :
0-7803-8614-0
DOI :
10.1109/ISCSPC.2003.1354451
