Frequency-tunable terahertz wave generation via excitation of phonon-polaritons in GaP and beam properties

Author

Tanabe, T. ; Suto, K. ; Nishizawa, J. ; Saito, K. ; Kimura, T.

Author_Institution

Dept. of Mater. Sci., Tohoku Univ., Sendai, Japan

fYear

2003

fDate

25-27 Aug. 2003

Firstpage

193

Lastpage

196

Abstract

High-power, frequency-tunable terahertz (THz) waves over the range from 0.3 to 7.5 THz were generated based on difference-frequency generation in GaP crystals using a YAG laser and an optical parametric oscillator. The THz-wave linewidth was estimated to 3.2 GHz and spatial distribution is discussed. We measured the absorption coefficient of the GaP as well as spectra of polytetrafluroethylene (PTFE) in the THz frequency region.

Keywords

III-V semiconductors; absorption coefficients; gallium compounds; optical frequency conversion; optical parametric oscillators; optical polymers; phonons; polaritons; spectral line breadth; submillimetre wave generation; submillimetre wave spectra; 0.3 to 7.5 THz; GaP; GaP crystals; THz-wave linewidth; YAG; YAG laser; YAl5O12; absorption coefficient; beam properties; difference-frequency generation; frequency-tunable terahertz waves; optical parametric oscillator.; phonon-polaritons excitation; polytetrafluroethylene; spatial distribution; terahertz wave generation; Biomedical optical imaging; Crystals; Frequency; Laser beams; Laser excitation; Optical mixing; Optical pumping; Oscillators; Power generation; Pump lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on

Print_ISBN

0-7803-8614-0

Type

conf

DOI

10.1109/ISCSPC.2003.1354453

Filename

1354453