Title :
High temperature operation of optically pumped InGaN/GaN MQW heterostructure lasers grown on Si substrates
Author :
Gurskii, A.L. ; Lutsenko, E.V. ; Pavlovskii, V.N. ; Zubialevich, V.Z. ; Ryabtsev, A.G. ; Ryabtsev, G.I. ; Yablonskii, G.P. ; Dikme, Y. ; Szymakovski, A. ; Kalisch, H. ; Jansen, R.H. ; Schineller, B. ; Heuken, M.
Author_Institution :
Inst. of Phys., Belarus Nat. Acad. of Sci., Minsk, Belarus
Abstract :
Laser action at optical excitation was obtained over the temperature range up to 360 °C in the InGaN/GaN multiple quantum well (MQW) heterostructures grown by MOVPE on (111) Si substrates. An increasing number of the strain-reducing layer stacks promoted a considerable reduction of laser threshold down to 30 kW/cm2. The maximal values of quantum efficiency, pulse energy and power of lasers were ηmax = 5%, Emax = 140 nJ, Pmax = 30 W, respectively. It is shown that the temperature behavior of the laser threshold is strongly correlated with characteristics of spontaneous emission at excitation level equal to the laser threshold.
Keywords :
III-V semiconductors; MOCVD; gallium compounds; indium compounds; optical pumping; quantum well lasers; semiconductor heterojunctions; spontaneous emission; vapour phase epitaxial growth; (111) Si substrates; 140 nJ; 30 W; 5 percent; InGaN-GaN; MOVPE; MQW heterostructure lasers; Si; excitation level; high temperature operation; laser action; laser power; laser threshold reduction; multiple quantum well; optical excitation; optically pumping; pulse energy; quantum efficiency; spontaneous emission; strain-reducing layer; Epitaxial growth; Epitaxial layers; Gallium nitride; Laser excitation; Optical pulses; Optical pumping; Pump lasers; Quantum well devices; Quantum well lasers; Temperature distribution;
Conference_Titel :
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN :
0-7803-8614-0
DOI :
10.1109/ISCSPC.2003.1354454
