Title :
RM3 integration of InP based 1.55 μm P-i-N photodetectors with silicon CMOS optical clock distribution circuits
Author :
Atmaca, Eralp ; Lei, Vivian ; Teo, Mindy ; Drego, Nigel ; Boning, Duane ; Fonstad, Clifton G. ; Khai, Loke Wan ; Fatt, Yoon Soon
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA
Abstract :
Recess mounting with monolithic metallization, or RM3 integration, is being developed to integrate III-V photodiodes on silicon CMOS circuits for optical clock distribution applications. In RM3 integration, partially processed heterostructure devices are placed in recesses formed in the dielectric layers covering the surface of an integrated circuit chip, the surface is planarized, and monolithic processing is continued to transform the heterostructures into optoelectronic devices monolithically integrated with the underlying circuitry.
Keywords :
CMOS integrated circuits; III-V semiconductors; elemental semiconductors; indium compounds; integrated circuit metallisation; integrated optoelectronics; p-i-n photodiodes; photodetectors; planarisation; semiconductor device metallisation; semiconductor heterojunctions; silicon; 1.55 micron; III-V photodiodes; InP; P-i-N photodetectors; RM3 integration; Si; dielectric layers; distribution circuits; integrated circuit chip surface; monolithic metallization; optoelectronic devices; planar surface; processed heterostructure devices; recess mounting; silicon CMOS optical clock; Clocks; Indium phosphide; Integrated circuit interconnections; Integrated circuit technology; Integrated optics; Optical interconnections; Optoelectronic devices; PIN photodiodes; Photodetectors; Silicon;
Conference_Titel :
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN :
0-7803-8614-0
DOI :
10.1109/ISCSPC.2003.1354455
