Title :
Photo enhanced QDs/ZnO-nanowire field-emission type field-effect transistor
Author :
Zhi Tao ; Xiang Liu ; Wei Lei ; Chi Li ; Yuxuan Chen
Author_Institution :
Display Res. Center, Southeast Univ., Nanjing, China
Abstract :
We combined the vacuum field-emission and microelectronic nanowire field-effect transistor technique in the photodetector application. Utilizing high light absorption of quantum dots, the photocurrent was enhanced to promote the performance (~10times) of the photodetector. The device was measured under the vacuum chamber of the scanning electron microscope (SEM) by a high-precision 4-probe nano-manipulator. With a 103 on/off current ratio, 40 on/off photocurrent and an excellent on/off photoresponse, our device pace a solid step to the future of the micro-vacuum electronic in the photodetector application.
Keywords :
II-VI semiconductors; field effect transistors; field emission; nanowires; photodetectors; scanning electron microscopy; semiconductor quantum dots; wide band gap semiconductors; zinc compounds; SEM; ZnO; ZnO nanowire; field emission type field effect transistor; high-precision 4-probe nanomanipulator; light absorption; microelectronic nanowire field effect transistor; on-off photocurrent; on-off photoresponse; photo enhanced quantum dots; photodetector application; scanning electron microscope; vacuum chamber; vacuum field emission; Field effect transistors; II-VI semiconductor materials; Logic gates; Photoconductivity; Photodetectors; Zinc oxide; high-precision manipulator; nanowire field-effect transistor; photodetector; quantum dots; vacuum field-emission;
Conference_Titel :
Vacuum Electronics Conference (IVEC), 2015 IEEE International
Conference_Location :
Beijing
Print_ISBN :
978-1-4799-7109-1
DOI :
10.1109/IVEC.2015.7223927
