Title :
Growth of InN and InGaN on Si substrate for solar cell applications
Author :
Yamaguchi, T. ; Morioka, C. ; Mizuo, K. ; Hori, M. ; Araki, T. ; Nanishi, Y. ; Suzuki, A.
Author_Institution :
Dept. of Photonics, Ritsumeikan Univ., Shiga, Japan
Abstract :
Epitaxial growth of InN and InGaN films by radio-frequency plasma-excited molecular beam epitaxy was studied as a key technology for the realization of a new high-efficiency tandem solar cell. Much improvement of InN and InGaN films on Si, which is necessary for the realization of a high-efficiency solar cell, was realized by brief substrate nitridation for 3 min prior to growth by MBE. Photoluminescence peaks at less than 0.8 eV were observed for all samples independent of the crystallinity of InN, which supports the recent reports of band-gap energy of InN being 0.7-0.8 eV. Rectifying characteristics and photovoltaic characteristics were also observed in our n-InN/p-Si heterojunctions.
Keywords :
III-V semiconductors; energy gap; gallium compounds; indium compounds; molecular beam epitaxial growth; nitridation; p-n heterojunctions; photoluminescence; photovoltaic effects; plasma materials processing; rectification; semiconductor epitaxial layers; semiconductor growth; solar cells; wide band gap semiconductors; 3 min; InN-InGaN; Si; band-gap energy; crystallinity; epitaxial growth; n-InN/p-Si heterojunctions; photoluminescence peaks; photovoltaic characteristics; radio-frequency plasma-excited molecular beam epitaxy; rectifying characteristics; solar cell applications; substrate nitridation; tandem solar cell; Crystallization; Epitaxial growth; Molecular beam epitaxial growth; Photoluminescence; Photonic band gap; Photovoltaic cells; Plasma applications; Radio frequency; Semiconductor films; Substrates;
Conference_Titel :
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN :
0-7803-8614-0
DOI :
10.1109/ISCSPC.2003.1354457
