DocumentCode :
1863570
Title :
Comparison of GaSb p-n junction photodiodes fabricated using Cl2/Ar and Cl2/BCl3/CH4/Ar/H2 plasma
Author :
Bhagwat, Vinay ; Langer, J.P. ; Bhat, Ishwara ; Dutta, P.S. ; Refaat, Tamer ; Abedin, M. Nurul
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
fYear :
2003
fDate :
25-27 Aug. 2003
Firstpage :
220
Lastpage :
225
Abstract :
GaSb p-n junction mesa photodiodes were fabricated using plasma etching with chlorine/argon and an improved mixed gas recipe. The performance of the diodes is compared.
Keywords :
III-V semiconductors; gallium compounds; p-n junctions; photodiodes; sputter etching; Cl2/Ar plasma; Cl2/BCl3/CH4/Ar/H2 plasma; GaSb; mixed gas; p-n junction mesa photodiodes; plasma etching; Anisotropic magnetoresistance; Argon; Etching; P-n junctions; Photodiodes; Plasma applications; Plasma chemistry; Plasma devices; Polymer films; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Compound Semiconductors: Post-Conference Proceedings, 2003 International Symposium on
Print_ISBN :
0-7803-8614-0
Type :
conf
DOI :
10.1109/ISCSPC.2003.1354458
Filename :
1354458
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1863570
بازگشت