DocumentCode :
1863571
Title :
Development of 100-nm-thick self-sensing nanocantilevers and characterization of the temperature dependence of the piezoresistivity and conductivity
Author :
Jiang, Yonggang ; Ono, Takahito ; Esashi, Masayoshi
Author_Institution :
Grad. Sch. of Eng., Tohoku Univ., Sendai, Japan
fYear :
2009
fDate :
21-25 June 2009
Firstpage :
1309
Lastpage :
1312
Abstract :
Piezoresistive nanocantilevers are proposed for high-sensitive sensing applications such as thermal detectors, mass sensors, and magnetic resonance force microscopy. This paper describes the development of 100-nm-thick piezoresistive nanocantilevers and characterization of the temperature dependence of the piezoresisitivity and conductivity. The pieozresistive nanocantilevers are fabricated using spin-on diffusion, electron beam lithography, deep reactive ion etching, and XeF2 vapor-phase etching techniques. A maximum longitudinal piezoresistance coefficient is obtained at 80~90 K. The shallo piezoresistor also exhibits a ldquoquantumrdquo metal-insulator transition phenomenon at a temperature as high as 40 K for the first time, which may prohibit its application at lower temperatures.
Keywords :
cantilevers; diffusion; electrical conductivity; electron beam lithography; metal-insulator transition; nanosensors; nanostructured materials; piezoresistive devices; sputter etching; XeF2 vapor-phase etching; conductivity; deep reactive ion etching; electron beam lithography; maximum longitudinal piezoresistance coefficient; piezoresistive nanocantilevers; piezoresistivity; quantum metal-insulator transition; self-sensing nanocantilevers; shallo piezoresistor; size 100 nm; spin-on diffusion; temperature dependence; Conductivity; Detectors; Etching; Magnetic force microscopy; Magnetic sensors; Piezoresistance; Sensor phenomena and characterization; Temperature dependence; Thermal force; Thermal sensors; Boron diffusion; Nanocantilever; Piezoresistivity;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International
Conference_Location :
Denver, CO
Print_ISBN :
978-1-4244-4190-7
Electronic_ISBN :
978-1-4244-4193-8
Type :
conf
DOI :
10.1109/SENSOR.2009.5285871
Filename :
5285871
Link To Document :
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