Extraction of BJT model parameters with a new strategy improving speed and accuracy

Author

Garwacki, Krzysztof

Author_Institution

Inst. of Electron., Warsaw Univ. of Technol., Poland

fYear

1988

fDate

7-9 Jun 1988

Firstpage

651

Abstract

A method of extracting bipolar junction transistor model parameters is presented which utilized the SPICE 2G-6 approach. The parameter-extraction technique is based on minimizing a nonlinear objective function, producing a least-squares fit of the model equations to a set of measured device characteristics. A strategic combination of the direct search optimization method and the variable metric algorithm is employed. A special strategy improving the speed of calculating the objective function during optimization is proposed. A model modification is also presented that gives high accuracy of the fit

Keywords

bipolar transistors; circuit analysis computing; semiconductor device models; SPICE 2G-6; accuracy increase; bipolar junction transistor model parameters; direct search optimization method; least-squares fit; measured device characteristics; model equations; model modification; nonlinear objective function minimisation; parameter-extraction technique; speed increase; speed of calculating; variable metric algorithm; Covariance matrix; Current measurement; Integrated circuit modeling; Least squares methods; Measurement errors; Nonlinear equations; Optimization methods; Parameter extraction; SPICE; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 1988., IEEE International Symposium on

Conference_Location

Espoo

Type

conf

DOI

10.1109/ISCAS.1988.15010

Filename

15010