DocumentCode :
1863654
Title :
Direct observation of localized high current effects in gallium arsenide field effect transistors
Author :
Dugan, M.P.
Author_Institution :
Anadigics Inc., Warren, NJ, USA
fYear :
1996
fDate :
3-6 Nov. 1996
Firstpage :
38
Lastpage :
41
Abstract :
High power GaAs integrated circuits operated at elevated temperatures display failure mechanisms which result from the high current densities through the FETs. Evidence of material growths or material accumulations on the drain contacts of high current FETs has been observed after the GaAs substrate material has been removed by chemical etching. These observations support the conclusion that these growths are responsible for end-of-life failures in the high current FETs.
Keywords :
III-V semiconductors; current density; etching; failure analysis; field effect transistors; gallium arsenide; semiconductor device reliability; GaAs; III-V semiconductors; chemical etching; current densities; end-of-life failures; failure mechanisms; field effect transistors; localized high current effects; material accumulations; material growths; Chemicals; Crystalline materials; Crystallization; Current density; Etching; FET integrated circuits; Failure analysis; Gallium arsenide; Temperature; Testing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual
Conference_Location :
Orlando, FL, USA
ISSN :
1064-7775
Print_ISBN :
0-7803-3504-X
Type :
conf
DOI :
10.1109/GAAS.1996.567632
Filename :
567632
Link To Document :
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