An experimental and theoretical study on the temperature dependence of GaAs solar cells

Author

Philipps, S.P. ; Hoheisel, R. ; Gandy, T. ; Stetter, D. ; Hermle, M. ; Dimroth, F. ; Bett, A.W.

Author_Institution

Fraunhofer Inst. for Solar Energy Syst., Freiburg, Germany

fYear

2011

fDate

19-24 June 2011

Abstract

In this paper the temperature-dependent behavior of GaAs single-junction solar cells is studied using both experimental and simulation tools. A cryostat is used to allow measurements of the external quantum efficiency (EQE) and IV curve at different temperatures with the corresponding experimental setup at Fraunhofer ISE. Two different GaAs single-junction solar cell structures are characterized in a wide temperature range between 203 K and 398 K. Through numerical modeling of the GaAs solar cells in a semiconductor simulation environment a deeper understanding of the cells´ temperature-dependent behavior is obtained. A good correlation between measurement and simulation results is achieved.

Keywords

III-V semiconductors; cryostats; gallium arsenide; numerical analysis; solar cells; EQE; Fraunhofer ISE; IV curve; cryostat; experimental study; external quantum efficiency; gallium arsenide single-junction solar cells; numerical modeling; semiconductor simulation environment; temperature dependence; theoretical study; Gallium arsenide; Numerical models; Photovoltaic cells; Temperature dependence; Temperature distribution; Temperature measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference (PVSC), 2011 37th IEEE

Conference_Location

Seattle, WA

ISSN

0160-8371

Print_ISBN

978-1-4244-9966-3

Type

conf

DOI

10.1109/PVSC.2011.6186264

Filename

6186264