DocumentCode :
1863912
Title :
Photoelectrochemical response for Cu-doped ZnIn2S4 electrode created using chemical bath deposition
Author :
Yu, Ya- Cian ; Liou, Ming-Zong ; Li, Wei-Che ; Cheng, Kong-Wei
Author_Institution :
Dept. of Chem. & Mater. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear :
2010
fDate :
1-3 Aug. 2010
Firstpage :
129
Lastpage :
132
Abstract :
Polycrystalline Cu-doped ZnIn2S4 samples were grown on fluorine doped-tin-oxide-coated glass substrates using chemical bath deposition. The effect of [Cu]/[Cu+Zn] molar ratio in solution bath on the structural, optical and photoelectrochemical properties of the samples was investigated. From the results of X-ray diffraction (XRD) patterns of samples, a small shift in the peaks to a higher-angle was observed with the increase in Cu content in the film. The thicknesses and direct band gaps of the samples are in the ranges of 520-1260 nm and 2.51-2.09 eV, as obtained from surface profile measurement and transmittance/reflectance spectra, respectively. The highest photoelectrochemical response of samples was 1.15 mA/cm2 at an external potential of + 1.0 V vs. an Ag/AgCl electrode in 0.5 M K2SO4 solution under illumination using a 300W Xe lamp system with the light intensity set at 100 mW/cm2.
Keywords :
X-ray diffraction; copper; electrochemical electrodes; energy gap; indium compounds; light transmission; liquid phase deposition; photoelectrochemistry; reflectivity; semiconductor growth; semiconductor thin films; ternary semiconductors; zinc compounds; X-ray diffraction; XRD; ZnIn2S4:Cu; chemical bath deposition; direct band gaps; electrode photoelectrochemical response; glass substrates; polycrystalline samples; reflectance spectra; size 520 nm to 1260 nm; surface profile measurement; thin film; transmittance spectra; Chemistry; Copper; Electric potential; Electrodes; Hydrogen; Photonic band gap; Zinc; chemical synthesis; photocatalyst; thin film;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Chemistry and Chemical Engineering (ICCCE), 2010 International Conference on
Conference_Location :
Kyoto
Print_ISBN :
978-1-4244-7765-4
Electronic_ISBN :
978-1-4244-7766-1
Type :
conf
DOI :
10.1109/ICCCENG.2010.5560374
Filename :
5560374
Link To Document :
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