A high-speed photodetector based on He-plasma assisted MBE grown InGaAsP

Author

Kang, J.U. ; Williams, K. ; Frankel, M.Y. ; Esman, R.D. ; Thompson, D.A. ; Robinson, B.J.

Author_Institution

Div. of Opt. Sci., Naval Res. Lab., Washington, DC, USA

fYear

1999

fDate

28-28 May 1999

Firstpage

124

Lastpage

125

Abstract

Summary form only given. So far, most metal-semiconductor-metal (MSM) photodetectors operating at 1.3 and 1.55 /spl mu/m have been transit-time limited, requiring submicron interdigital lithography and submicron absorption thicknesses. Devices made from InGaAs have shown bandwidths of 12 GHz in a 100/spl times/100 /spl mu/m/sup 2/ MSM and 18.5 GHz in a smaller area MSM. In this work, we have measured the impulse response and the microwave response of simple MSM photodetectors fabricated on He-MBE grown InGaAsP at 1.55 /spl mu/m and 1.3 /spl mu/m, respectively.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; metal-semiconductor-metal structures; microwave detectors; microwave photonics; molecular beam epitaxial growth; photodetectors; plasma deposition; semiconductor epitaxial layers; semiconductor growth; 1.3 mum; 1.55 mum; He-MBE grown InGaAsP; He-plasma assisted MBE grown InGaAsP; InGaAsP; high-speed photodetector; impulse response; metal-semiconductor-metal photodetectors; microwave response; photodetectors; Absorption; Charge carrier lifetime; Electrons; Filling; High speed optical techniques; Molecular beam epitaxial growth; Optical pumping; Photodetectors; Reflectivity; Transient analysis;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.833973

Filename

833973