DocumentCode
1863947
Title
A monolithic 0.5 to 50 GHz MODFET distributed amplifier with 6 dB gain
Author
Perdomo, J. ; Mierzwinski, M. ; Kondoh, H. ; Li, C. ; Taylor, T.
Author_Institution
Hewlett-Packard Co., Santa Rosa, CA, USA
fYear
1989
fDate
22-25 Oct. 1989
Firstpage
91
Lastpage
94
Abstract
A monolithic 0.5-50-GHz distributed amplifier has been developed using a MODFET IC process to demonstrate a gain of 6.5 dB+or-0.5 dB across the frequency range. Input and output return losses were better than 12 dB. The noise figure of this amplifier was 4.8 dB+or-0.4 dB measured up to 26.5 GHz. The output power at the 1-dB compression point was 12 dBm at 40 GHz.<>
Keywords
MMIC; field effect integrated circuits; high electron mobility transistors; microwave amplifiers; 0.5 to 50 GHz; 12 dB; 4.8 dB; 6 to 6.5 dB; EHF; GaAs; MM-wave type; MMIC; MODFET IC process; SHF; distributed amplifier; millimetre wave operation; monolithic microwave amplifier; Distributed amplifiers; Equivalent circuits; Frequency; Gain; HEMTs; MODFET circuits; MODFET integrated circuits; Noise figure; Noise measurement; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1989. Technical Digest 1989., 11th Annual
Conference_Location
San Diego, CA, USA
Type
conf
DOI
10.1109/GAAS.1989.69301
Filename
69301
Link To Document