Self-oscillation in a resonant tunnelling diode electroabsorption modulator

Author

Figueiredo, J.M.L. ; Ironside, C.N. ; Boyd, A.R. ; Stanley, C.R. ; Leite, A.M.P. ; McMeekin, S.G.

Author_Institution

Dept. of Electron. & Electr. Eng., Glasgow Univ., UK

fYear

1999

fDate

28-28 May 1999

Firstpage

125

Lastpage

126

Abstract

Summary form only given. Using an optical waveguide containing a resonant tunnelling diode (RTD) implemented in the AlGaAs material system, our group previously reported electroabsorption modulation at 14 GHz with a modulation depth of 6 dB. This paper reports high speed operations of a RTD optical waveguide modulator due to self-oscillation. Self-oscillating modulators are of interest for WDM systems as the sidebands produced by the modulator can provide a comb of frequencies at the appropriate channel spacing.

Keywords

III-V semiconductors; aluminium compounds; electro-optical modulation; electroabsorption; gallium arsenide; high-speed optical techniques; integrated optoelectronics; microwave photonics; optical communication equipment; resonant tunnelling diodes; wavelength division multiplexing; 14 GHz; AlGaAs; RTD; WDM; channel spacing; electroabsorption modulation; high speed operations; optical waveguide; resonant tunnelling diode electroabsorption modulator; self-oscillation; Cameras; Diodes; High speed optical techniques; Optical materials; Optical modulation; Optical pulse shaping; Optical pulses; Optical waveguides; Resonant tunneling devices; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics, 1999. CLEO '99. Summaries of Papers Presented at the Conference on

Conference_Location

Baltimore, MD, USA

Print_ISBN

1-55752-595-1

Type

conf

DOI

10.1109/CLEO.1999.833974

Filename

833974